item drain current transconductance pinch-off voltage gate-source breakdown voltage output power at 1 db g.c.p. power gain at 1 db g.c.p. power-added efficiency thermal resistance symbol i dss v gso - 6000 - -1216 -1.0 -2.0 -3.5 -5 - - 44.5 45.5 - 9.0 10.0 - - 44 - - 1.0 1.4 v ds = 5v, v gs =0v v ds = 5v, i ds =7.2a v ds = 5v, i ds =720ma i gs = -720 a channel to case v ds = 12v f=1.96ghz i ds = 2a v ds = 10v f=1.96ghz i ds = 2a a ms v db dbm v c/w % gm v p p 1db g 1db output power at 1 db g.c.p. power gain at 1 db g.c.p. - 44.5 - - 10.0 - db dbm p 1db g 1db add drain current - 6.0 8.0 a i dsr r th conditions unit limits typ. max. min. electrical characteristics (ambient temperature ta=25 c) g.c.p.: gain compression point case style: ip parameter drain-source voltage gate-source voltage total power dissipation storage temperature channel temperature symbol v ds tc = 25 c v v w c c v gs p t t stg t ch condition 107 -65 to +175 +175 -5 15 rating unit absolute maximum ratings (ambient temperature ta=25 c) fujitsu recommends the following conditions for the reliable operation of gaas fets: 1. the drain-source operating voltage (v ds ) should not exceed 12 volts. 2. the forward and reverse gate currents should not exceed 54.4 and -17.4 ma respectively with gate resistance of 25 ?. 3. the operating channel temperature (t ch ) should not exceed 145 c. 1 applications ? solid state base-station power amplifier. ?pcs/pcn communication systems. edition 1.6 december 1999 FLL400IP-2 l-band medium & high power gaas fet description the FLL400IP-2 is a 35 watt gaas fet that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high power l-band amplifiers. this product is targeted to reduce the size and complexity of highly linear, high power base station transmitting amplifiers. this new product is uniquely suited for use in pcs/pcn base station amplifiers as it offers high gain, long term reliability and ease of use. features ? push-pull configuration ? high power output: 35w (typ.) ?high pae: 44% (typ.) ?broad frequency range: 800 to 2000 mhz. ?suitable for class a operation at 10v and class ab operation at 12v
2 v ds = 12v i ds = 2a f = 1.96ghz v ds = 12v i ds = 2a 19 21 23 25 27 29 31 35 33 37 33 34 35 32 31 30 36 37 38 39 40 41 42 43 45 46 10 0 20 30 40 50 44 33 34 35 32 31 30 36 37 38 39 40 41 42 43 45 46 47 44 input power (dbm) output power (dbm) p out output power & add vs. input power 1.8 1.85 1.9 1.95 2.0 frequency (ghz) output power (dbm) add (%) add pin=37dbm 30dbm 25dbm 20dbm output power vs. frequency power derating curve 40 80 100 120 60 20 0 50 100 150 200 case temperature ( c) total power dissipation (w) FLL400IP-2 l-band medium & high power gaas fet
3 -60 -58 -56 -54 -52 -50 -48 -46 -44 -42 -40 -38 -36 -34 -32 -30 -28 -26 -24 -14 -12 -16 -18 -20 -22 28 26 30 32 34 36 38 40 42 44 total output power (dbm) v ds = 12v i ds = 2a f = 1.96ghz ? f = +5.0mhz imd (dbc) output power vs. imd im5 im3 -60 -58 -56 -54 -52 -50 -48 -46 -44 -42 -40 -38 -36 -34 -32 -30 -26 -28 -24 -22 -20 28 27 29 30 32 33 31 34 35 36 37 38 39 40 41 42 43 total output power (dbm) v ds = 10v i ds = 5a f = 1.96ghz ? f = +5mhz imd (dbc) output power vs. imd im5 im3 FLL400IP-2 l-band medium & high power gaas fet
4 fujitsu compound semiconductor products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: caution ?do not put these products into the mouth. ?do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. ?observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. for further information please contact: fujitsu compound semiconductor, inc. 2355 zanker rd. san jose, ca 95131-1138, u.s.a. phone: (408) 232-9500 fax: (408) 428-9111 www.fcsi.fujitsu.com fujitsu microelectronics europe, gmbh quantum devices division network house norreys drive maidenhead, berkshire sl6 4fj phone:+44 (0)1628 504800 fax:+44 (0)1628 504888 fujitsu limited reserves the right to change products and specifications without notice. the information does not convey any license under rights of fujitsu limited or others. ? 1999 fujitsu compound semiconductor, inc. printed in u.s.a. fcsi0799m200 FLL400IP-2 l-band medium & high power gaas fet case style "ip" metal-ceramic hermetic package 18.6 0.2 (0.732) 45 2 3 4 5 6 1 22 0.2 (0.866) 2.4 (0.094) (0.039) 9.8 0.2 (0.386) (0.102) 2.6 0.2 8.2 (0.332) 1.9 (0.075) 3.0 0.5 min. (0.118) 3.0 0.5 min. (0.118) 5.5max (0.217) 13.8 0.2 (0.543) 13.3 (0.523) 2-r1.3 0.2 (0.051) 5 (0.197) 0.1 +0.05 -0.01 2-1.4 (0.055) 2-1 (0.039) unit: mm (inches) 1, 2: gate 3, 6: source 4, 5: drain
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